Semiconductor device having grooves of different depths for improved device isolation
US4609934A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 6, 1984 |
| Grant date | Sep 2, 1986 |
| Priority date | — |
| Expiry date | Apr 6, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having grooves of different depths for improved device isolation is presented. In the preferred embodiment of the present invention, a first groove and a second groove provide isolation of devices within regions of different conductivity type. The first and second grooves are each shallower than the conductivity type region in which they reside. A third groove is formed between adjacent regions of different conductivity type. The third groove is deeper than both the first groove and the second groove and extends to a depth sufficient to penetrate the substrate of the semiconductor device. The third groove operates to prevent latch-up between devices in the adjacent well regions. Filler materials are used to fill the first, second and third grooves to improve their respective isolating characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.