Lateral bidirectional notch FET with gates at non-common potentials
US4612465A · kind A · utility
24Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1985 |
| Grant date | Sep 16, 1986 |
| Priority date | — |
| Expiry date | May 13, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/113
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Split gate electrodes in the notch proximate the channels control bidirectional conduction, and are at non-common potentials in the OFF state to increase breakdown voltage. Self-shielding of the gates is also disclosed to further increase OFF state breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.