Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects
US4616404A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1984 |
| Grant date | Oct 14, 1986 |
| Priority date | — |
| Expiry date | Nov 30, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved lateral polysilicon diode in an integrated circuit structure is disclosed. The diode is characterized by low reverse current leakage, a breakdown voltage of at least 5 volts, and low series resistance permitting high current flow before being limited by saturation. The polysilicon diode comprises a polysilicon substrate having a first zone sufficiently doped to provide a first semiconductor type and a second zone sufficiently doped to provide a second semiconductor type whereby the junction between the two zones forms a diode. The lateral edges of the diode are treated to remove defects to thereby inhibit current leakage around the edges of the lateral diode to lower the reverse current leakage of the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.