Planar field-shaped bidirectional power FET
US4622568A · kind A · utility
16Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1984 |
| Grant date | Nov 11, 1986 |
| Priority date | — |
| Expiry date | May 9, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
Abstract
Lateral planar FET structure (2) is disclosed for bidirection power switching, including AC application. Voltage blocking capability is enhanced in the lateral current flow device (2) by field shaping in the drift region (22). In the OFF state, the field shaping region (24) straightens field lines and prevents gradient induced depletion and unwanted inversion of conductivity type along a lateral drift region portion (54) extending beneath a top major surface (28) of the substrate between channel-containing regions (6) and (8).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.