Thin film transistor having an annealed gate oxide and method of making same
US4633284A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1983 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Nov 8, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6728
Abstract
A new and improved thin film field effect transistor and method provides such a transistor having increased operating frequencies and higher output currents. The transistor includes a gate electrode having a non-coplanar surface with respect to the substrate and a deposited semiconductor material overlying the gate electrode to form a current conductor channel between a source and drain. The length of the current conduction channel is determined by the thickness of the gate electrode which can be accurately controlled. As a result, short channel lengths are possible without high precision photolithography for high output currents and fast operating speeds. Further, a gate insulator is disposed between the gate and the deposited semiconductor. The gate insulator, which can be a gate oxide, can be annealed prior to the deposition of the deposited semiconductor to provide enhanced field effect mobilities. This further increases the transistor output currents and operating speeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.