Method for forming a film of dielectric material on an electric component
US4654223A · kind A · utility
23Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1986 |
| Grant date | Mar 31, 1987 |
| Priority date | — |
| Expiry date | Mar 11, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02345
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thin dielectric films are formed on an electronic component by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. The polymerizable oligomers are comprised of polyamic acids, polyamic esters, polyisoimides, and mixtures thereof which can be crosslinked to form a three-dimensional network via sites at the vinyl or acetylenic end groups and sites at carbonyl groups contained within the polymeric chain. Use of these polymerizable oligomers permits utilization of low temperature methods of curing which reduce intrinsic and extrinsic stress within the cured dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.