Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects
US4678538A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1986 |
| Grant date | Jul 7, 1987 |
| Priority date | — |
| Expiry date | Apr 21, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B13/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support. This process consists of covering a monocrystalline silicon support of orientation (100) with a SiO.sub.2 layer, producing in the latter a configuration having in the form of oriented (100) parallel insulating strips, an alternation of overhanging parts and recessed parts carrying out the etching of the SiO.sub.2 layer in order to locally form at the ends of said layer at least one opening, said etching being continued until the substrate is exposed, depositing on the etched SiO.sub.2 layer a silicon film, covering the silicon film with an encapsulating layer, carrying out a heat treatment of the structure obtained in order to recrystallize the silicon film in monocrystalline form with the same orientation as the substrate and eliminating the encapsulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.