High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer
US4682199A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1983 |
| Grant date | Jul 21, 1987 |
| Priority date | — |
| Expiry date | Apr 28, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/206
Abstract
In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8.times.10.sup.15 atoms/cm.sup.3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/.quadrature.. The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.