Fast bipolar transistor for integrated circuit structure and method for forming same
US4682409A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1985 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Jun 21, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/019
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved bipolar device is disclosed having a polysilicon emitter formed over a base region of a silicon substrate with oxide spacer portions formed on the sides of the emitter and metal silicide portions formed over the base region adjacent the oxide spacers whereby the use of polysilicon for the emitter results in high gain as well as vertical shrinking of the device because of the shallow diffusion of the emitter into the base and the elimination of an extrinsic base region. The use of oxide spacers and metal silicide adjacent the spacers results in a shrinkage of the horizontal spacing of the device to lower the base-emitter resistance and capacitance to thereby increase the speed of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.