Method of making a planar polysilicon bipolar device
US4686763A · kind A · utility
15Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1985 |
| Grant date | Aug 18, 1987 |
| Priority date | — |
| Expiry date | Oct 2, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28525
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly planarized integrated circuit structure having at least one bipolar device is described as well as a method of making the structure. The structure comprises a substrate having a field oxide grown thereon with openings defined therein respectively for formation of a collector contact region and a base/emitter region for a bipolar device in the substrate. All of the contacts of the bipolar device are formed using polysilicon which fills the defined openings in the field oxide resulting in a highly planarized structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.