Gas mixtures for the vapor deposition of semiconductor material
US4696758A · kind A · utility
177Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1986 |
| Grant date | Sep 29, 1987 |
| Priority date | — |
| Expiry date | Oct 6, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.