Vapor deposition of semiconductor material
US4698234A · kind A · utility
186Cited by
0References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1986 |
| Grant date | Oct 6, 1987 |
| Priority date | — |
| Expiry date | Oct 17, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.