Negative resist with oxygen plasma resistance
US4701342A · kind A · utility
11Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1986 |
| Grant date | Oct 20, 1987 |
| Priority date | — |
| Expiry date | Mar 6, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0758
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Polymers formed from monomers such as chloromethyl styrene and trimethylsilylmethyl methacrylate form negative-acting resists that are sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.