Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal
US4714951A · kind A · utility
21Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1986 |
| Grant date | Dec 22, 1987 |
| Priority date | — |
| Expiry date | Feb 26, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi.sub.2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta.sub.2 O.sub.5, especially on the sides of the grids of polycrystalline silicon and on the thick oxide and an aluminum alloy layer comes into contact with the tantalum silicide to form connections with the portions of tantalum silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.