Inventor · St-Estève, FR

Annie Baudrant

3Patents
3h-index
3Co-inventors
36Inventor score

Filing activity: Nov 20, 1984 → Jan 12, 1987

Most-cited inventions

PatentTitleAreaCited byStatus
US4593454A Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation Emerging Cross-Sectional Technologies 55 Expired
US4780429A Method of fabrication of MOS transistors having electrodes of metallic silicide Emerging Cross-Sectional Technologies 25 Expired
US4714951A Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal Emerging Cross-Sectional Technologies 21 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.