Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition
US4720560A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1984 |
| Grant date | Jan 19, 1988 |
| Priority date | — |
| Expiry date | Oct 25, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/306
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Compounds having the molecular formula: EQU MR.sub.x wherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl substituted cyclopentadienyl, at least two of said R substituents are different, and M is an element selected from Groups 2B or 3A of the Periodic Table, Bismuth, Selenium, Tellurium, Beryllium, and Magnesium, but excluding Aluminum, Bismuth, Selenium, and Tellurium if any R is hydride. The hybrid compound is used for metal organic chemical vapor deposition. The invention also includes a metal organic chemical vapor deposition process employing a hybrid of first and second compounds having the above formula, but wherein the R substituents of each compound can be like or unlike and M is selected from Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table except for Carbon, Nitrogen, Oxygen, and Sulfur. The hybrid composite compound has different properties than the first and second compounds, and thus can be more suitable for a particular metal organic chemical vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.