Benjamin C. Hui
12Patents
5h-index
10Co-inventors
59Inventor score
Filing activity: Nov 12, 1980 → Jul 27, 1993
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4734514A | Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical vapor deposition | Chemistry; Metallurgy | 30 | Expired |
| US4847399A | Process for preparing or purifying Group III-A organometallic compounds | Chemistry; Metallurgy | 17 | Expired |
| US4720560A | Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition | Chemistry; Metallurgy | 11 | Expired |
| US5502227A | Liquid indium source | Chemistry; Metallurgy | 7 | Expired |
| US4900855A | Chemical process for obtaining high purification of monoalkylarsines and dialkylarsines and purified mono- and dialkylarsines | Chemistry; Metallurgy | 5 | Expired |
| US5350869A | Purification of trialkylgallium, synthesis of trialkylgallium | Chemistry; Metallurgy | 5 | Expired |
| US4924019A | Synthesis of high purity dimethylaluminum hydride | Chemistry; Metallurgy | 3 | Expired |
| US5068372A | Method for the synthesis of primary arsines | Chemistry; Metallurgy | 3 | Expired |
| US4897500A | Method of deactivating residues of the production of dimethylaluminum hydride and dimethylgallium hydride | Chemistry; Metallurgy | 1 | Expired |
| US4999223A | Chemical vapor deposition and chemicals with diarsines and polyarsines | Emerging Cross-Sectional Technologies | 1 | Expired |
| US4942252A | Synthesis of phosphorus and arsenic, halides and hydrides | Chemistry; Metallurgy | 1 | Expired |
| US4301129A | Synthesis of NaBH.sub.3 CN and related compounds | Chemistry; Metallurgy | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.