Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization
US4725561A · kind A · utility
26Cited by
10References
17Claims
0Family size
Inventors
Key dates
| Filing date | Jun 5, 1986 |
| Grant date | Feb 16, 1988 |
| Priority date | — |
| Expiry date | Jun 5, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76272
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This process consists of producing patterns (17) of an insulating material on a monocrystalline silicon substrate (12), depositing on the complete structure an amorphous or polycrystalline silicon film (26), covering the latter with a layer (28) of an encapsulating material, carrying out a heat treatment on the structure obtained serving to vertically embed in substrate (12) the insulating material patterns (17) and forming above the latter a monocrystalline silicon layer (33), eliminating the encapsulating material layer (28) and etching the monocrystalline silicon layer obtained (33), so as to form said islands (34).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.