Method of making an implanted resistor, and resistor obtained thereby
US4725810A · kind A · utility
9Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1986 |
| Grant date | Feb 16, 1988 |
| Priority date | — |
| Expiry date | Jun 20, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This method of making an implanted resistor comprises the steps of implanting the resistor with ordinary techniques and deposition over the implanted resistor of a polysilicon layer having a set thickness and fully covering the resistor. Thus, the resulting resistor is unaffected by any subsequent thermal treatments and its value remains constant irrespective of any high potential metal layers or connections crossing it. The method affords in particular resistive values of the order of 1 kOhms/square.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.