Silicide to silicon bonding process
US4737474A · kind A · utility
23Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1986 |
| Grant date | Apr 12, 1988 |
| Priority date | — |
| Expiry date | Nov 17, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900.degree.-1000.degree. C. for ten minutes or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.