Protection of integrated circuits from electric discharge
US4739378A · kind A · utility
17Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1987 |
| Grant date | Apr 19, 1988 |
| Priority date | — |
| Expiry date | Feb 17, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
Described is an integrated semiconductor structure for the protection from electrical discharges of electrostatic origin of particularly sensitive components of an integrated circuit. The structure is almost entirely formed directly underneath a particular input pad thus requiring a minimum useful area and is characterized by very high damaging voltage and speed of intervention because of the extremely low series resistance of the two zener junctions constituting the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.