NPN equivalent structure with breakdown voltage greater than the intrinsic breakdown voltage of NPN transistors
US4740821A · kind A · utility
6Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1987 |
| Grant date | Apr 26, 1988 |
| Priority date | — |
| Expiry date | Mar 5, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
Described is an improved NPN equivalent structure with a breakdown voltage higher than the intrinsic breakdown voltage of the NPN transistor utilizing a complementary PNP transistor and a JFET transistor with the gate connected to ground, the drain connected to the base of the PNP and the source connected to the collectors of the complementary pair. An integrated form of the structure is particularly advantageous and the equivalent NPN transistor is substantially exempt from Early effect and has improved output current capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.