Patent · US Expired

Process for producing memory cell having stacked capacitor

US4742018A · kind A · utility

109Cited by
1References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 1, 1986
Grant dateMay 3, 1988
Priority date
Expiry dateDec 1, 2006

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S148/014

Abstract

A process for producing a memory cell having a stacked capacitor. As the reduction in device size of memory cells progresses, it becomes difficult to obtain a satisfactorily large capacitance even with a stacked capacitor structure. To enable a larger capacitance to be obtained for the same occupied area, projections and recesses are provided on the surface of a capacitor electrode. It is possible, according to the process, to readily produce projections and recesses for increasing the storage capacitance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.