Process for CVD of tungsten
US4749597A · kind A · utility
9Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1987 |
| Grant date | Jun 7, 1988 |
| Priority date | — |
| Expiry date | Oct 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.