Method for the microwave fabrication of boron doped semiconductor materials
US4756924A · kind A · utility
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Key dates
| Filing date | Apr 10, 1986 |
| Grant date | Jul 12, 1988 |
| Priority date | — |
| Expiry date | Apr 10, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.