Recrystallized CMOS with different crystal planes
US4768076A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1985 |
| Grant date | Aug 30, 1988 |
| Priority date | — |
| Expiry date | Sep 11, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
Abstract
A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation. At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.