Method of improving silicon dioxide
US4774197A · kind A · utility
68Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1986 |
| Grant date | Sep 27, 1988 |
| Priority date | — |
| Expiry date | Jun 17, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of improving the integrity of silicon dioxide is disclosed. As applicable, for example, to the formation of oxide regions in an integrated circuit (such as thin, gate oxides) an implantation of nitrogen ions is performed prior to high temperature processing steps of the circuit fabrication. High temperature steps then result in silicon-nitrogen compounds being formed at the interfaces of the silicon dioxide regions with subjacent and superjacent regions of the integrated circuit structure. These compounds prevent the incursion of impurities into the silicon dioxide which would degrade its quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.