Patent · US Expired

Blanket tungsten deposition for dielectric

US4777061A · kind A · utility

22Cited by
0References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 14, 1987
Grant dateOct 11, 1988
Priority date
Expiry dateDec 14, 2007

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/14
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.