Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US4780848A · kind A · utility
120Cited by
10References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 3, 1986 |
| Grant date | Oct 25, 1988 |
| Priority date | — |
| Expiry date | Jun 3, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital memory based on a memory cell having two magnetoresistive, ferromagnetic film portions separated by an intermediate layer, all of limited thickness. Each of the magnetoresistive film portions is less than 300 .ANG. thick and the intermediate layer is less than 100 .ANG. thick. Conductive wordlines separated from the upper magnetoresistive film by an insulating layer are utilized, in conjunction with sense current which passes through the cells, to select particular cells for read or write operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.