Plasma treating method and apparatus therefor
US4795529A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1987 |
| Grant date | Jan 3, 1989 |
| Priority date | — |
| Expiry date | Oct 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3348
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.