Fusible link structure for integrated circuits
US4796075A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 15, 1986 |
| Grant date | Jan 3, 1989 |
| Priority date | — |
| Expiry date | Apr 15, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fusible link structure and method of making the same for use in integrated circuit structures is provided in which the fusible link comprises, in one embodiment, an alloy of platinum and silicon. The preferred alloy comprises the eutectic mixture having approximately 23 atomic percent silicon. Electrical connections to the fusible link are preferably provided by a layer of aluminum on a layer of material, preferably an alloy of titanium and tungsten wherein the titanium and tungsten alloy is disposed between the fusible link and the aluminum layer, and serves as a diffusion barrier for preventing diffusion of the aluminum into the fusible link. In a preferred embodiment, a fusible link is deposited on a relatively thick dielectric layer, preferably more than 10,000 .ANG. thick, having a relatively low thermal conductivity. The preferred method of depositing the fusible link is sputtering from a target comprising the platinum-silicide alloy, thus achieving a fuse element having uniform composition throughout its cross section. A fuse of this type has high reliability, requires low fusing current, and is dielectrically encapsulated sealed within the integrated circuit structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.