Process for forming sub-micrometer patterns using silylation of resist side walls
US4803181A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1987 |
| Grant date | Feb 7, 1989 |
| Priority date | — |
| Expiry date | Mar 17, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for forming sidewalls for use in the fabrication of semiconductor structures, where the thin, vertical sidewalls are "image transferred" to define sub-micron lateral dimensions. First, a patterned resist profile with substantially vertical edges is formed on a substrate on which the sidewalls are to be created. Then, the profile is soaked in a reactive organometallic silylation agent to silylate the top and the vertical edges of the resist to a predetermined depth, thereby rendering the profile surfaces highly oxygen etch resistant. In a subsequent anisotropic RIE process, the horizontal surfaces of the silylated profile and the unsilylated resist are removed, leaving the silylated vertical edges, that provide the desired free-standing sidewalls, essentially unaffected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.