Power transistor with self-protection against direct secondary breakdown
US4821136A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1987 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | Sep 21, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0826
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A power transistor with self-protection against direct secondary breakdown comprises a plurality of elementary transistors having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals also mutually connected and forming a common collector terminal, and base terminals connected to at least one current source. Switches are furthermore provided selectively associated with some of the elementary transistors, preferably with one elementary transistor every two, and allowing operation of the associated elementary transistors in the saturation operating region and switching off the associated elementary transistors during high-voltage operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.