Processing apparatus and method
US4822450A · kind A · utility
45Cited by
19References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1988 |
| Grant date | Apr 18, 1989 |
| Priority date | — |
| Expiry date | May 18, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/517
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.