Multilayer metallization method for integrated circuits
US4824803A · kind A · utility
37Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1987 |
| Grant date | Apr 25, 1989 |
| Priority date | — |
| Expiry date | Jun 22, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal contacts and interconnections for semiconductor integrated circuits are fabricated through the deposition of a sandwich structure of metal. The bottom layer of a refractory metal prevents aluminum spiking into silicon; the top layer of refractory metal or alloy serves to reduce hillocking of the middle layer of conductive material. The upper layer of refractory metal at the location of the contact pads is etched off to improve bonding during packaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.