System and methods for wafer charge reduction for ion implantation
US4825087A · kind A · utility
22Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1987 |
| Grant date | Apr 25, 1989 |
| Priority date | — |
| Expiry date | May 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/026
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A diode flood gun for introducing an amplified current of low energy electrons into an ion beam for neutralizing charge build up on a target such as a semiconductor wafer during irradiation by the beam. The low energy, amplified current is effected by introducing an inert gas into the flood gun.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.