Electronic semiconductor device for protecting integrated circuits against electrostatic discharges
US4829344A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1986 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Oct 20, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
This electronic semiconductor device for protecting integrated circuits against electrostatic discharges has a minimal bulk, can withstand high damaging voltages and be produced during the same production phases as the integrated circuit to be protected. The device comprises a pair of diodes connected back to back, arranged between an input of the integrated circuit to be protected and the ground line, with the cathodes connected together and formed by a single semiconductor layer and the anodes formed in a single process phase by employing top-bottom production techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.