Method for selective deposition of metal thin film
US4830891A · kind A · utility
14Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1987 |
| Grant date | May 16, 1989 |
| Priority date | — |
| Expiry date | Nov 30, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metal thin film is deposited on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate by preventing hydrogen atoms from the adhesion to portions of the substrate not to be deposited with a metal using a special means for heating only the substrate or a special gas flow controlling means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.