Fabricating a semiconductor device with low defect density oxide

US4851370A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

• Raymond H. Doklan · Lehighton, US
• Edward P. Martin, Jr. · Orlando, US
• Pradip K. Roy · Orlando, US
• Scott F. Shive · Orlando, US
• Ashok Sinha · Palo Alto, US

Key dates

• Filing date: Dec 28, 1987
• Grant date: Jul 25, 1989
• Expiry date: Dec 28, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02271
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Low defect density oxides suitable for use as thin gate oxides or in charge storage capacitors are described. First and second layers are formed on a substrate with misaligned defect structures. A third layer is then grown by diffusing a species through the first and second layers to the substrate. The species reacts with the substrate. The low defect density results from the misaligned defect structure of the first and second layers. In one embodiment, the first and second layers are grown and deposited oxides, respectively. The third layer is grown by diffusing oxygen through the first two layers and the interface between the first and second layers acts as a sink trapping defects. The oxide silicon interface has desirable characteristics because the oxide grows in near equilibrium conditions.