Plasma operation apparatus
US4876983A · kind A · utility
59Cited by
0References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 19, 1988 |
| Grant date | Oct 31, 1989 |
| Priority date | — |
| Expiry date | Jan 19, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.