Method of making a semiconductor memory device with recessed array region
US4882289A · kind A · utility
70Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1988 |
| Grant date | Nov 21, 1989 |
| Priority date | — |
| Expiry date | Apr 22, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
Abstract
A semiconductor memory wherein a memory cell region having a plurality of memory cells and has higher altitude from the surface of semiconductor substrate is formed in the recessed part of semiconductor substrate having the recessed part and projected part and a peripheral circuit region which is comparatively low from the surface of semiconductor substrate is formed to the projected part of semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.