Deposition of polysilicon using a remote plasma and in situ generation of UV light.
US4882299A · kind A · utility
12Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1987 |
| Grant date | Nov 21, 1989 |
| Priority date | — |
| Expiry date | Nov 5, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A processing apparatus and method for depositing doped or undoped polysilicon on a wafer utilizing a single process chamber to heat the wafer, provide a silicon comtaining gas, and if desired, an appropriate dopant gas to the chamber with the excitation energy being provided by either or both of a remotely generated plasma form and illumination of the wafer with an in situ generated ultraviolet energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.