Power transistor with improved resistance to direct secondary breakdown
US4886982A · kind A · utility
5Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1987 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | Dec 21, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/63
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This power transistor comprises a plurality of elementary transistors, also indicated as "fingers", having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals also mutually connected and forming a common collector terminal, and base terminals connected to at least one current source. Each elementary transistor is part of a circuit comprising a diode forming, together with the elementary transistor, a current mirror, so that the collector current passing through the elementary transistor is far less sensitive to the temperature gradients which originate inside the power transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.