Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication

US4887142A · kind A · utility

Assignee

• SGS Microelettronica S.p.A. · IT

Inventors

• Franco Bertotti · Milano, IT
• Carlo Cini · Cornaredo, IT
• Claudio Contiero · Milano, IT
• Paola Galbiati · Monza, IT

Key dates

• Filing date: Nov 28, 1988
• Grant date: Dec 12, 1989
• Expiry date: Nov 28, 2008

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

Disclosed is a monolithic integrated semiconductor device which may contain specimens of seven different circuit components; namely: lateral N-MOS and lateral P-MOS transistors (CMOS), vertical N-DMOS and vertical P-DMOS transistors, vertical NPN bipolar transistors, vertical PNP bipolar transistors with isolated collector and low leakage junction diodes as well as a process for fabricating such a device.