Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads
US4890149A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1987 |
| Grant date | Dec 26, 1989 |
| Priority date | — |
| Expiry date | Sep 21, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This integrated device for shielding injected charges in driving circuits for inductive and/or capacitive loads comprises four integrated structures including a first barrier region with high resistivity which surrounds the buried layer of the epitaxial flyback pocket which may be set at a potential lower than ground on the side of the buried layer which faces the driving circuit pocket; a first charge collecting region provided in the epitaxial flyback pocket; a third low-loss diode structure, formed in an epitaxial pocket which is isolated from the flyback pocket and is arranged between the latter and the driving circuit, and connected so as to clamp the voltage between the epitaxial flyback pocket and the substrate to the diode direct conduction voltage; and, finally, a last barrier structure formed by a charge collecting region connected to the supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.