Titanium nitride film in contact hole with large aspect ratio
US4897709A · kind A · utility
114Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 1988 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | May 26, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a titanium nitride film as a barrier which is formed in a hole. The width or diameter of the hole is smaller than 1 .mu.m, and the aspect ratio thereof is larger than 0.7. The sidewall of the hole is substantially perpendicular to the surface of a semiconductor substrate. By the low pressure CVD method with a cold wall type CVD apparatus, it becomes possible to form the titanium nitride film having excellent characteristics with a good step coverage in a considerably fine hole having a large aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.