Etching device, and etching method
US4908095A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1989 |
| Grant date | Mar 13, 1990 |
| Priority date | — |
| Expiry date | Apr 28, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67766
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching device comprising a housing in which etching process is carried out, an electrode system having lower and upper electrodes opposed to each other used to generate plasma between these electrodes, while a semiconductor wafer is being placed on the lower electrode, a lifter system to move the lower electrode up and down, a high-frequency power source for applying current between these electrodes, a holder member located between the lower and upper electrodes to hold the wafer at a certain position between these electrodes, and a gas supply means for supplying reaction gases used to generate plasma, between the lower and upper electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.