Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4908298A · kind A · utility
63Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1987 |
| Grant date | Mar 13, 1990 |
| Priority date | — |
| Expiry date | Oct 30, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.