Processing apparatus and method
US4910043A · kind A · utility
40Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1987 |
| Grant date | Mar 20, 1990 |
| Priority date | — |
| Expiry date | Jul 16, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.