Wafer flood polishing
US4910155A · kind A · utility
180Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1988 |
| Grant date | Mar 20, 1990 |
| Priority date | — |
| Expiry date | Oct 28, 2008 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/16
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
In a chem-mech polishing process for planarizing insulators such as silicon oxide and silicon nitride, a pool of slurry is utilized at a temperature between 85.degree. F.-95.degree. F. The slurry particulates (e.g. silica) have a hardness commensurate to the hardness of the insulator to be polished. Under these conditions, wafers can be polished at a high degree of uniformity more economically (by increasing pad lifetime), without introducing areas of locally incomplete polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.